法国专利FR3025353A1 NON-VOLATILE COMPOSITE MEMORY WITH ERASE BY PAGE OR BY WORD

专利PDF首页>>法国专利

专利附录

专利说明

权利要求

类似技术

同族专利

引用文献

法律状态

优先权

专利摘要:
The invention relates to a non-volatile memory (MEM2) comprising bit lines (BLj, BLj + 1), a first sector (SO) erasable per page comprising memory cells of a first type (Mi, j, Mi, j +1), and a second sector (S1) erasable by word or bit comprising memory cells of a second type (Ci-n, j / 2). The memory cells of the first type comprise a single floating gate transistor (Ti, j, Ti, j + 1) and the memory cells of the second type (Ci-n, j / 2, Ci-n-1, j / 2) comprise a first floating gate transistor (TRi-n, j / 2) and a second floating gate transistor (TEi-n, j / 2) whose floating gates are electrically connected, the second floating gate transistor of a cell memory of the second type for individually erasing the memory cell.
公开号:FR3025353A1
申请号:FR1458239
申请日:2014-09-03
公开日:2016-03-04
发明作者:Rosa Francesco La
申请人:STMicroelectronics Rousset SAS；
IPC主号:

专利说明:

[0001] The present invention relates to nonvolatile memories and in particular to a memory and memory cell structure of the type described in application US 2013/0228846. By way of reminder, FIG. 1 represents such a memory map structure MAO and shows memory cells Mi, j, Mi-1, i + 1 of the aforementioned type, here belonging to two adjacent physical pages Pi, Pi-1 10 of FIG. memory plane, of respective ranks "i" and "i-1". The memory cells Mi, j, Mi-1, j + 1 are accessible for reading and programming via bit lines BLi, BLi + i, a word line WLi-1, i and control lines. The drain terminals D of the transistors Ti, j, are connected to the bit line BLi and the drain terminals of the transistors, each of which comprises a floating gate transistor, respectively, T1, j. Ti, j41i are connected to the bit line BLi11. The control gates CG of the transistors Ti, j, Ti, j + 1 are connected to the gate control line CGLi and the control gates CG of the floating gate transistors are connected to the gate control line CGLi-1. Each floating gate transistor Ti, j, moreover has its source terminal connected to a source line SL via a selection transistor ST. The selection transistors ST of the memory cells Mid and share the same CSG control grid and the two memory cells are, therefore, called "binoculars". Similarly, memory cells Mi, j + 1 and are twin memory cells and their selection transistors ST have a common control gate CSG. Each common control gate is preferably a vertical gate buried in a substrate receiving the MAO memory plane, the source line SL being also a buried line. These CSG common control grids, or twin memory cell selection grids, are connected to the word line WLi-1, i-3025353 2 Such memory cells are erased or programmed by the channel, i.e. say by carrying the substrate to a positive erase or negative programming voltage causing the extraction of electric charges from their floating gates or the injection of electric charges into their floating gates, by FowlerNordheim effect. More particularly, the erasure of a memory cell is ensured by combining the positive voltage applied to the substrate with a negative voltage applied to the control gate of its floating gate transistor, while the control gate of the floating gate transistor of FIG. the twin memory cell receives a positive erase inhibit voltage to prevent it from being simultaneously erased (Fig.11 of the aforementioned application).
[0002] Similarly, the programming of a memory cell is ensured by combining a negative voltage applied to the bit line of the memory cell and the substrate, to a positive voltage applied to the control gate of its floating gate transistor, while the control gate of the floating gate transistor of the twin memory cell receives a negative programming inhibit voltage to prevent it being simultaneously programmed (FIG 12 of the aforementioned application).
[0003] Finally, the reading of a memory cell is ensured by applying a positive voltage to the control gate of its floating gate transistor, as well as a positive voltage to the corresponding bit line, while the twin memory cell, which is connected to the same bit line, receives on its control gate a negative reading inhibition voltage to prevent it being simultaneously read (Fig 9 of the aforementioned request). This memory plane structure having twin memory cells comprising a shared vertical selection grid and buried in the substrate has the advantage of being small in size. The channel erasure method that they require is well suited to producing a page-erasable memory array, but is less suitable for producing a word-erasable memory array. This appears by comparing the word-erasable memory array shown in FIG. 24 of the aforementioned application to the erasable memory array 5 per page shown in FIG. 23 of this application, the first being more complex than the second. Thus, for the memory map to be word-erasable, each CGL grid control line, instead of being connected to all the memory cells of a page, must be divided into a plurality of control lines. grid one grid control line per word. This results in a significant complexity of word and column line decoders, and requires the provision of various voltage switches to control, within each page, the grid control lines of the different words.
[0004] It may therefore be desirable to provide an improvement of this memory and memory cell structure which is more suitable for the implementation of a word-erasable memory, and does not lead to a complexity of the plan control elements. 20 memory. Embodiments of the invention relate to a non-volatile memory on a semiconductor substrate comprising bit lines, memory cells of a first type each comprising a single floating gate transistor, the floating gate transistor having a region drain connector electrically connected to a bit line, and memory cells of a second type each comprising a first floating gate transistor having a drain region electrically connected to a first bit line to which memory cells are also electrically connected. of the first type, and a second floating gate transistor having a drain region electrically connected to a second bit line to which are also electrically connected memory cells of the first type, and wherein: the floating gate of the first floating gate transistor is electrically connected to the floating gate of the second tr floating gate ansistor, and the second floating gate transistor 3025353 comprises a conductive region extending opposite its floating gate via a tunnel dielectric layer. According to one embodiment, the memory comprises at least one first erasable sector per page or sector, comprising memory cells of the first type, and at least one second erasable sector per word or bit, comprising memory cells of the second type. . According to one embodiment, the conductive region of the second floating gate transistor of a second type of memory cell is a doped region of the substrate. According to one embodiment, each floating gate transistor of a first type memory cell and at least each first floating gate transistor of a second type memory cell has a source region electrically connected to a source line by via a selection transistor. According to one embodiment, the selection transistor comprises a vertical control gate buried in the substrate. According to one embodiment, the memory cells of the first type and the second type are arranged in pairs, each pair of memory cells comprising a common selection transistor.
[0005] According to one embodiment, the memory is configured to, when erasing a memory cell of the second type, apply an erase voltage to the bit line to which the second floating gate transistor of the memory cell so as to extract electrical charges from the floating gate of the second floating gate transistor through the conductive region. According to one embodiment, the memory is configured to, when programming a memory cell of the first type, apply a programming voltage to the bit line to which the floating gate transistor of the cell is connected. memory, and, when programming a memory cell of the second type, apply a programming voltage to the bit line to which is connected the second floating gate transistor of the memory cell.
[0006] According to one embodiment, the memory is configured to read a memory cell of the first type through a bit line to which the floating gate transistor of the memory cell is connected, and read a memory cell of the second. type via a bit line at which the first floating gate transistor of the memory cell is connected. According to one embodiment, the memory comprises a column of bit lines comprising a plurality of bit lines, a read circuit associated with the column for individually reading a memory cell connected to a bit line of the column, a circuit of FIG. programming associated with the column for programming a memory cell connected to a bit line of the column, an erase circuit associated with the column for erasing a memory cell of the second type connected to a bit line of the column, a decoder column configured to connect bit lines of the memory column to the read circuit or the programming circuit, and connect to the erase circuit rows of bits of the column which are connected to the second floating gate transistors of the cells memory of the second type. According to one embodiment, the column decoder is configured, when reading a memory cell of the first type, to connect any one of the bit lines to the read circuit, and, when reading from a memory cell of the second type, connect to the read circuit a bit line connected to the first floating gate transistor of a memory cell. According to one embodiment, the column decoder is configured, when programming a memory cell of the first type, to connect any one of the bit lines to the programming circuit 3025353 6 during programming of a memory cell of the second type, connect to the programming circuit a bit line connected to the second floating gate transistor of the memory cell, and, when erasing a memory cell of the second type, connect to the programming circuit 5 a bit line connected to the second floating gate transistor of the memory cell. According to one embodiment, the erasing circuits are grouped in a program connected to all of the bit lines of a column via the column decoder, and providing an erase voltage or a programming voltage. According to one embodiment, the column decoder is configured to receive an address of a bit line within a column, information on the sector in which a memory cell is located, and information on a type of column. operation applied to a memory cell, namely reading, programming or erasure.
[0007] According to one embodiment, the first sector comprises pages each comprising N binary words, and the second sector comprises pages each comprising N / 2 words having the same number of bits as the words of the first sector.
[0008] Embodiments and methods of manufacturing a memory array structure and memory cells according to the invention, as well as methods for reading and writing memory cells according to the invention, will be described in the following in with reference to the accompanying drawings, in which: - FIG. 1 previously described is the electrical diagram of a conventional memory plane and memory cell structure, - FIG. 2 is the electrical diagram of a first embodiment of FIG. embodiment of a memory array and memory cell structure according to the invention; FIG. 3 is a sectional view of a memory cell of FIG. 2; FIG. 4 is another sectional view of FIG. the memory cell; FIG. 5 shows voltages applied to the memory array of FIG. 2 for erasing a memory cell; FIG. 6 is a sectional view of a memory cell of FIG. shows applied tensions 7 is another sectional view of the memory cell, and shows the voltages applied to the memory cell, FIG. 8 shows voltages applied to the memory plane of FIG. 2 for the programming of the memory cell, FIG. FIG. 9 is a sectional view of a memory cell of FIG. 8 and shows voltages applied to the memory cell; FIG. 10 is another sectional view of the memory cell; FIG. memory cell and shows the voltages applied to the memory cell, FIG. 11 shows voltages applied to the memory array of FIG. 2 for the programming of a memory cell by hot electron injection, FIG. 12 is a view sectional view of a memory cell of FIG. 11 and shows voltages applied to the memory cell, FIG. 13 shows voltages applied to the memory array of FIG. 2 for reading a memory cell, FIG. are you FIG. 13 shows a sectional view of a memory cell and shows voltages applied to the memory cell; FIGS. 15 to 24 show steps of a method of manufacturing a memory cell shown in FIGS. FIG. 25 is a circuit diagram of a memory including the memory plane of FIG. 2; FIG. 26 is a circuit diagram of a second embodiment of a memory array and memory cell structure. According to the invention, FIG. 27 is the electrical diagram of a page or word erasable composite memory comprising the memory plane of FIG. 1 and the memory plane of FIG. 2.
[0009] FIG. 2 is an electrical diagram of an embodiment of two memory cells Ci, j, and a memory plane MA1 according to the invention, derived from the memory plane and memory cell structure of FIG. 1.
[0010] The memory cells are accessible for reading, programming and erasing via a first bit line RBLi, a second bit line EBLi, a word line WLi_i, i, and two grid control lines CGLi, CGLi_i. The memory cell Ci belongs to a physical page Pi 10 of the memory plane and the memory cell belongs to an adjacent page Pi_i. The pages Pi, Pi_i may comprise various other memory cells and the memory map MA1 may comprise various other pages.
[0011] The memory cell Cid comprises two floating gate transistors TEi, i whose floating gates FGr, FGe are interconnected, the floating gate transistor TRi, i being dedicated to reading the transistor memory cell and the floating gate transistor TEi, i dedicated to erasing the memory cell. In one embodiment, the interconnection of the floating gates FGr, FGe is ensured by fabricating the two floating gates from the same conductive element CFG. The transistor TRi, ia a control gate CGr connected to the gate control line 25 CGLi, a drain terminal D connected to the bit line RBLi and a source terminal S connected to the drain terminal D of a transistor ST selection whose source terminal S is connected to a source line SL. The transistor TEi, ia a control gate CGe connected to the gate control line CGLi, a drain terminal 30D connected to the bit line EBLi and a source terminal S connected to the drain terminal D of a transistor ST selection whose source terminal S is connected to a source line SL. The memory cell has the same structure as the memory cell Cid 35 and comprises two floating gate transistors TRi_i, i, TEi_i, i whose floating gates FGr, FGe are interconnected and / or formed by a same conductive element CFG. The transistor TRi_i, ia a control gate CGr connected to the gate control line CGLi_i, a drain terminal D connected to the bit line RBLi and a source terminal S connected to the drain terminal D of a transistor of selection 5 ST whose source terminal S is connected to a source line SL. The floating gate transistor TEi_i, ia a control gate CGe connected to the gate control line CGLi_i, a drain terminal D connected to the bit line EBLi and a source terminal S connected to the drain terminal D d ' a selection transistor ST whose source terminal S is connected to a source line SL. The selection transistors ST associated with the floating gate transistors TRi, j, have a common control gate CSG connected to the word line WLi_i, i, which is preferably produced in the form of a vertical grid buried in a receiving substrate the memory map MAl. Likewise, the selection transistors ST associated with the floating gate transistors TEi, j, have a buried vertical common control gate CSG which is connected to the word line WLil, i. The memory cell Ci, j is therefore, structurally, the equivalent of the combination of the memory cells Mi, j, Mi, j + 1 shown in FIG. 1, whose floating gates have been electrically connected. Similarly, the memory cell is, structurally, the equivalent of the combination of memory cells shown in Figure 1, the floating gates 25 were electrically connected. The two memory cells can therefore be called "dual" memory cells. Their selection transistors ST having two by two the same control grid, these memory cells can also be called "twin" memory cells.
[0012] The floating gate transistor TEi, i, however, differs from the floating gate transistor Ti, j + 1 of the memory cell Mi, j + 1 in that it comprises a conductive region IS which extends in front of its floating gate. FGe with interposition of a tunnel dielectric layer, and which is electrically connected to its drain terminal D. Also, the floating gate transistor differs from the floating gate transistor of the memory cell NIi_1, j + 1 in that it comprises a conductive region IS which extends in front of its floating gate FGe via a tunnel dielectric layer, and which is electrically connected to its drain terminal D.
[0013] FIG. 3 is a sectional view of an embodiment of the transistors TEi, j, TEi_i, i and their respective selection transistors ST. The floating gate transistors are made on a PW substrate, for example silicon, forming the upper region of a WF semiconductor chip. The WF chip is initially a wafer on which several integrated circuits are made, which is then cut into individual chips. The source lines SL of the selection transistors ST are formed by a deep doped region n0 which here forms a collective source plane for the entire memory plane. The common control gate CSG of the selection transistors ST is formed with a conductive material, for example polysilicon (polycrystalline silicon), deposited in a trench made in the substrate, and isolated therefrom by a dielectric layer OD. This "conducting trench" also forms the word line WLi_i, i along an axis perpendicular to the plane of the figure. The floating gates FGe of the transistors TEi, j, TEi_i, i are arranged on each side of the trench CSG, and rest on the substrate PW via a tunnel dielectric layer D1. They are formed here by a conductive part, for example made of polysilicon, which extends to the transistors TRi, j, (not visible in this section plane, see FIG 4) to also form the floating gates 30 of these transistors. The control gates CGe of the transistors TEi, j, extend above the floating gates via a dielectric layer D2. They are formed here by polysilicon conductive strips which also form the gate control lines CGLi, CGLi_i along an axis perpendicular to the plane of the figure.
[0014] N2 and n3 doped regions implanted on each side of the stack of grids FG / CGe respectively form the drain (D) and source (S) regions of the transistors TEi, j, TEi_i, i, the n3 regions forming Also the drain regions (D) of the selection transistors ST. The source regions (S) of the selection transistors ST are here formed by the nO layer, the CSG common vertical gate of the selection transistors extending here to the nO region. In an alternative embodiment, the lower end of the CSG conductive trench does not reach the nO region and a deep doped pocket is implanted between the trench and the nO layer to form the source region of the ST selection transistors. The gate stacks FG / CGe of the transistors TEi, j, are covered by a dielectric layer D3 on which the EBLi bit line extends. Cl contacts pass through the layer D3 to electrically connect the bit line EBLi to the drain regions n2 (D) of the transistors TEi, j. The conductive regions IS of the transistors TEi_i, i are here nl doped regions of the substrate which extend. 20 under the floating gates FG, between the drain regions n2 and source n3 of the transistors TEi, j, TEi_i, i, and are therefore covered by the tunnel dielectric layer Dl. The dielectric layers DO, D1, D2 and D3 are for example made of silicon dioxide SiO2.
[0015] FIG. 4 is a sectional view of the floating gate transistors of the memory cells Ci, j, and their respective selection transistors ST. The structure of these transistors is essentially identical to that of the transistors TEi, j, and will not be described again. The control gates CGe of these transistors are formed by the polysilicon pieces forming the gate control lines CGLi, CGLi_i and their floating gates FG are formed by the same pieces of polysilicon as those forming the floating gates of the transistors TEi, j, (Fig. 3). Their drain regions n2 (D) are connected by contacts C1 to the bit line RBLi which extends over the dielectric layer D3.
[0016] The transistors TRi, j, differ from the transistors TEi, j, in that they do not include the conductive region IS extending under the floating gate FG. Thus, when these transistors are biased by a suitable gate voltage, a conductive channel CH1 or CH1 '5 may be formed between the drain region n2 (D) and the source region n3 (S). A vertical conductive channel CH2 or CH2 'can also be formed between the drain n3 (D) and source (S) regions of the selection transistor ST if the common vertical gate CSG of these transistors simultaneously receives a bias voltage. More particularly, the vertical channel region CH2 of the selection transistor ST of the memory cell Ci, j extends opposite a first face of the buried vertical control gate CSG, and the vertical channel region CH2 'of the selection transistor ST of the memory cell extends opposite a second face of the buried vertical control gate 15, and therefore opposite the channel region CH2 of the selection transistor of the memory cell Ci, j. The transistors TRi, j, may also differ from the transistors by the thickness of their tunnel dielectric layer D1, which may be different from that which extends under the floating gates of the transistors TEi, j, TEi_i, i, this choice being provided to those skilled in the art depending on the method of programming the memory cells that will be retained, namely by Fowler-Nordheim effect by means of transistors or by hot electron injection by means of transistors TRi, j, these two options are described below. Unlike transistors TRi, j, TRi_i, i, transistors TEi, j, TEi_i, i can not have a conductive channel CH1 controlled by the voltage applied to them, because the region extending between their regions of drain n2 and source n3 is short-circuited by the doped region n1 (Fig. 3). These transistors are therefore always on regardless of their gate voltage, and can not be used to read the memory cells Ci, j. They can instead be used to erase the memory cells under conditions where no drain-source current crosses them, that is to say by Fowler-Nordheim effect. They can also be used to program memory cells under conditions where no drain-source current passes through them, also by the Fowler-Nordheim effect, as will be seen later.
[0017] As a result, the selection transistors ST associated with the transistors are not used and are only present here to rationalize the fabrication of the memory cells, in accordance with one embodiment of a manufacturing method described below. It may indeed be simpler to make a useless transistor 10 within a set of transistors used, when the non-realization of the useless transistor would involve additional masking and photolithography steps. As, on the one hand, these selection transistors are on when the word line to which they are connected receives a positive voltage, and, on the other hand, the floating gate transistors TEi, j, are still on due to In their region IS, it should be ensured during the design of the memory control devices that the corresponding bit line EBLi can not simultaneously receive a voltage other than zero.
[0018] In summary, the transistor TE i, i can be used as an erase transistor of the memory cell Ci, j by the Fowler-Nordheim effect, which consists of a static programming without programming current, whereas the transistor TRi, i can be used as a read transistor of the memory cell. Similarly, the transistor can be used as an erase transistor of the memory cell by the Fowler-Nordheim effect and the transistor can be used as a read transistor of the memory cell. The bit line RBLi can be used as the read bit line and the EBLi bit line 30 as the erasure bit line of the memory cell Ci, j or the memory cell With respect to the programming of the memory cells Ci Embodiments of the invention provide two methods, as preferred by those skilled in the art, namely a Fowler-Nordheim effect programming method by means of the erase transistor TEi, i or 3025353. 14, or a method of programming by hot electron injection by means of the read transistor TRi, i or methods of erasing, programming and reading cells of the memory plane MA1 will be described in the following, Assuming by way of example that it is desired to erase, program and read the memory cell C. Deletion of a memory cell by Fowler-Nordheim effect via the erase transistor TEij A method of erasing the memory cell Ci, j without erasing the cell The memory via the erase transistor TEi, j, is described in Table 1 of the Appendix, which is an integral part of the description. Figures 5 and 6 illustrate this erasure method. Figure 5 is the circuit diagram of Figure 2 in which the voltage values in Table 1 have been reported. FIG. 6 is a sectional view of the transistors TE 1, j, identical to that of FIG. 3, in which the voltage values shown in Table 1 have been reported. The conductive region IS of the transistor TEi i is raised to the positive voltage EBLV applied to the bit line EBLi, here 6V, via the contact C1 and the drain region n1 (D) of the transistor. The control gate CGe of the transistor TEi, j being raised to the negative voltage CGVi, here -8V, there appears between this control gate and the conductive region IS a voltage difference dV equal to -14V (FIG. causes the extraction of electrons from the floating gate FGe by Fowler-Nordheim effect, which puts the transistor TEi, i in the erased state. Since the bit line RBLi connected to the floating gate transistor TRi, i is at high impedance, this transistor plays no part in the erasing process of the memory cell. The floating gate of the transistor TRi, i however being electrically connected to that of the transistor TEi, j, the transfer of electric charges also causes the erasure of the transistor TRi, j, the memory cell Ci, j as a whole being thus erased. via the transistor TEi, j.
[0019] The conductive region IS of the transistor of the twin memory cell is also raised to the positive voltage EBLV applied to the bit line EBLi, here 6V, via the contact C1 and the drain region n1 (D) of the transistor . The control gate CGe of the transistor TEi_i, i being brought to the positive voltage CGVi_i, here 3V, there appears between this control gate and the conductive region IS a voltage difference dV equal to -3V, which is insufficient to extract electrons of the floating gate of the transistor. The twin memory cell is thus not erased.
[0020] This memory map and memory cell structure thus allows individual erasure of each memory cell, ie bit erasure. This possibility makes it possible to carry out indifferently a memory erasable by bit, word or page without modifying the general structure of the memory plane or its control organs.
[0021] FIG. 7 is a sectional view of two transistors TEi, 41 of two memory cells C1, 41, (not shown in FIG. 2 or FIG. 5) which are contiguous with the memory cells Ci, j. The memory cells Ci, j41 , Ci_1, i + 1 are connected to the same word line as the memory cells Ci, j, but are connected to a different bit line EBLi + i which receives the default voltage EBLV *, here 0V. The transistors TEi, j + 1, have their control gates CGe connected to the same gate control lines CGLi, CGLi_i as the transistors TEi, j, and therefore receive the same voltages CGV-i, here -8V, and CGVi_i, here 3V. Thus, the voltage difference dV between the control gate CGe of the transistor TEi, j + 1 and its conducting region IS is equal to -8V and this transistor undergoes an erase stress, that is to say a parasitic erase of low intensity which could, if the transistor was in the programmed state, and after many cycles of erasure of other memory cells connected to the gate control lines CGLi, CGLi_i, substantially alter its threshold voltage and therefore 3025353 16 corruption of its state, and therefore a corruption of the data bit associated with the programmed state. Furthermore, the voltage difference dV between the control gate 5 CGe of the transistor and its conducting region IS is 3V and this transistor undergoes no erasure stress, the gate control line CGLi_i being raised to only 3V. Likewise, default voltages applied to memory cells connected to other word lines WL (not shown in the figures) do not cause erasure stress in these memory cells. Ultimately, the erasing method according to the invention not only allows individual erasure of each memory cell, but also limits the occurrence of erasure stress to memory cells connected to the same gate control line. , while various other known erasure methods, allowing only one deletion per word, if not per page, also cause erasure stress to the memory cells connected to other word lines. The management of the erasure stress, by methods known per se of refreshing the memory cells, is therefore simplified, given the reduced number of memory cells to be refreshed. For example, it may be decided to initiate a memory cell refresh sequence of a word line after N memory cell programming cycles of this word line, by providing an erase cycle counter associated with the line of the word line. word. Programming of a memory cell by Fowler-Nordheim effect via the erase transistor TEij A method of programming the memory cell Cid without programming the memory cell r via the erase transistor TEi, j, is described by the table 2 in the Annex. Figures 8 and 9 illustrate this programming method. Figure 8 is the wiring diagram of Figure 2 in which the voltage values in Table 2 have been reported. FIG. 9 is a sectional view of the transistors TE 1, j, identical to that of FIG. 3, in which the voltage values in Table 2 have been reported.
[0022] The conductive region IS of the transistor TEi i is taken to the voltage EBLV applied to the bit line EBLi, here 0V, via the contact C1 and the drain region n1 (D) of the transistor. The control gate CGe of the transistor TEi, i being brought to the positive voltage CGVi, here 14V, there appears between this control gate and the conductive region IS a voltage difference dV positive equal to 14V (FIG. the injection of electrons into the floating gate FGe by Fowler-Nordheim effect, which puts the transistor TEi, i in the programmed state. The bit line RBLi connected to the floating gate transistor TRi, i being high impedance, this transistor plays no part in the programming process of the memory cell. The floating gate of the transistor TRi, i however, being electrically connected to that of the transistor TEi, j, the transfer of electric charges also causes the programming of the transistor TRi, j, the memory cell Ci, j as a whole being thus programmed by FIG. intermediate of the transistor TEi, j. The conductive region IS of the transistor of the twin memory cell is taken to the voltage EBLV applied to the bit line EBLi, here 0V, via the contact C1 and the drain region n1 (D) of the transistor. The control gate CGe of the transistor TEi_i, i being brought to the positive voltage CGVi_i, here 3V, it appears between this control gate and the conductive region IS a voltage difference dV equal to 3V, which is insufficient to inject electrons of the floating gate of the transistor. The twin memory cell is therefore not programmed. FIG. 10 is a sectional view of the transistors TEi, j41, of the neighboring memory cells Ci, j + 1, already described in relation to FIG. 7, connected to the same word line as the memory cells Ci, j, but connected to the neighboring bit line EBLi_n which receives the default voltage EBLV *, here 6V. The transistors TEi, j41, 3025353 18 have their control gates CGe connected to the same gate control lines CGLi, CGLi_i as the transistors TEi, j, TEi_i, i and therefore receive the same voltages CGV.i, here 14V, and CGVi_i , here 3V. Thus, the voltage difference dV between the control gate CGe of the transistor TEi, i + i and its conducting region IS is 8V and this transistor undergoes a programming stress, that is to say a weak parasitic programming. intensity. Moreover, the difference in voltage dV between the control gate 10 CGe of the transistor and its conducting region IS is 3V and this transistor undergoes no programming stress, the gate control line CGLi_i being raised to only 3V. Likewise, default voltages applied to the memory cells connected to other word lines WL (not shown in the figures) do not cause any programming stress in these memory cells. Ultimately, this programming method, like the erasing method previously described, only causes electrical stress to memory cells connected to the same gate control line, the effects of which can be neutralized by a method of refreshing the gate. type mentioned above. Programming a memory cell by injecting hot electrons via the read transistor TRij A method of programming the memory cell Ci, j without programming the memory cell Ci1, j, via the read transistor TRi, j, is described in Table 3 in the Annex.
[0023] Figures 11 and 12 illustrate this programming method. Figure 11 is the circuit diagram of Figure 2 in which the voltage values in Table 3 have been reported. FIG. 12 is a sectional view of the transistors TR 1, j, TR 1, i, identical to that of FIG. 4, in which the voltage values shown in table 3 have been reported.
[0024] The transistor TRi, i receives the positive voltage CGV-i, here 10V, on its control gate and is in the on state, the conductive channel CH1 appearing in the substrate PW under the gate stack FG / CGr. The selection transistor ST associated with the transistor TRi, i receives the positive selection voltage SV, here 1 to 2V, on its buried vertical grid CSG, and is in the on state, the vertical conductive channel CH2 appearing in front of the gate CSG. The bit line RBLi being raised to the positive voltage RBLV, here 4V, and the source line SL being connected to the ground (0V), a current flows from the bit line 10 to the source line through the transistor TRi , i and the corresponding selection transistor ST. This current corresponds to an electron flow HE shown in FIG. 12, in the opposite direction to that of the current. This electron flux contains electrons with high kinetic energy (hot electrons) that bypass the n3 doped region ("cold" region). Some of these electrons are injected into the floating gate at an injection point HI, causing the programming of the transistor TRi, j, as well as the programming of the erase transistor TEi, i which plays no role in the programming process here. . The transistor of the twin cell 20 on the other hand receives the voltage CGVi_i which is equal to 0V, so that it does not undergo any spurious programming process, nor any of the other reading transistors of the memory plane, which receive only zero voltages. .
[0025] Reading a memory cell via the read transistor TRij A method of reading the memory cell Ci, j via the read transistor TRi, j, is described in Table 4 in the Appendix.
[0026] Figures 13 and 14 illustrate this reading method. Figure 13 is the circuit diagram of Figure 2 in which the voltage values in Table 4 have been reported. FIG. 14 is a sectional view of transistors TR 1, j, TR 1, i, identical to that of FIG. 4, in which the voltage values shown in FIG. 4 have been reported.
[0027] The transistor TRi, i receives the positive voltage CGV-i, in this case from 2 to 3V, which is lower than the threshold voltage of the programmed transistor but greater than the threshold voltage of the erased transistor. If the transistor TRi, i is in the erased state, that is to say if it has a threshold voltage Vt lower than the voltage CGV-i, the conductive channel CH1 appears in the substrate PW, under the FG / CGr grid stack. The selection transistor ST associated with the transistor TRi, i receives the positive selection voltage SV, here 3V, on its buried vertical grid CSG, and is in the on state, the vertical conductive channel CH2 appearing in front of the buried gate CSG. The bit line RBLi being raised to the positive voltage RBLV, here 1V, and the source line SL being connected to the ground (0V), the transistor TRi, i is traversed by a read current Ir which flows from the line of bit to the source line. This current Ir is on the other hand zero if the transistor TRi, i is in the programmed state, that is to say if it has a threshold voltage greater than the voltage CGV-i. A current amplifier (not shown) connected to the bit line RBLi makes it possible to detect the presence or absence of the current Ir, and to deduce therefrom the erased or programmed state of the transistor TRi, j, to which a logic value , 0 or 1, is assigned by convention. The transistor of the twin memory cell receives the negative voltage CGVi_i, here -2V. This transistor, if it is in the erased state, may have a threshold voltage close to zero. Applying a negative gate control voltage ensures that it remains in the off state. Indeed, this transistor being connected to the same bit line RBLi as the transistor TRi, i being read, its conduction could corrupt the reading of the transistor TRi, j.
[0028] Figures 15 to 22 show steps of a method of manufacturing memory cells Ci, j, previously described. FIG. 15 shows a preliminary stage of formation in the PW substrate of three STIO, ST1, ST2 insulation trenches of STI type ("Shallow Trench Insolation") which delimit two substrate strips S1, S2 in which the memory cells go to be realized. This step is preceded by a step of implantation in the substrate of the buried layer nO forming a source plane (not visible in the figure) or implantation of several source lines. A source plane is generally preferred over multiple source lines if it is intended to erase memory cells by hot electron injection.
[0029] In a step shown in FIG. 16, a conductive trench is formed transversely to the strips S1, S2 by etching the substrate, depositing the dielectric layer OD (not visible) and depositing a PO polysilicon layer and engraving of it. The trench 10 is intended to form both the word line WLi_i, i and the buried vertical control gate of the selection transistors ST of the memory cells. During a step shown in FIG. 17, the substrate band S2 is doped by implantation of N-type dopants, the substrate band S1 being masked during this operation. This step makes it possible to produce the conducting region IS which will extend under the floating gate of the erase transistors TEi, j. During a step shown in FIG. 18, the previously described tunnel dielectric layer D1 is deposited on the substrate PW, then a polysilicon band P1, intended to form floating gates, is deposited on the substrate strips S1 and S2.
[0030] During a step shown in FIG. 19, the dielectric layer D2 is deposited on the substrate PW, then a layer of polysilicon P2 is deposited on the layer D2. The layer P2 is then etched with the layer D2 as well as with the layer P1 to form the gate control lines CGLi, CGLi_i, and, beneath it, the CFG common floating gates 30, resulting from the simultaneous etching of the In a step shown in Fig. 20, the substrate strips S1, S2 are doped by self-dopant implantation aligned on the gate control lines CGL1, CGLi_i and on the word line the substrate strip. S2 is therefore doped a second time. This step 30 shows the source S and drain D regions of the transistors as well as the drain regions of the selection transistors ST.
[0031] In a step shown in Fig. 21, the dielectric layer D3 is deposited on the substrate and holes are made in the layer D3, then metallized to form the contacts C1. Cl contacts extend above drain regions D of transistors TRi, j, TRi_i, j and others above drain regions D 10 of transistors TEi, j. In a step shown in FIG. 22, a metal layer M1 (FIG. "metal 1") is deposited on the substrate and is etched to obtain two conductive strips which form the bit lines RBLj and EBLj, the first being arranged on the contacts C1 made above the drain regions D of the TRi transistors, j, TRi_i, j and the second arranged on the contacts made above the drain regions D transistors TEi, j,.
[0032] FIG. 23 is identical to FIG. 22 and shows the area occupied in width W and in length L by each memory cell Ci, j, the assembly forming a "base brick" of the memory plane, containing two twin dual cells. , whose repetition allows the design of a memory array MA1 of variable size chosen according to the intended application. The contacts C1 being in this case shared by memory cells made above and below memory cells Ci, j, Ci_1, j ("above" and "below" in the plane of the figure), which are not shown, only half of the area occupied by the contacts C1 is considered to be part of the "base brick" 20. Although these memory cells Ci, j, have a surface double that shown in the figure 1, those skilled in the art will appreciate that the semiconductor surface they occupy does not differ much from that occupied by conventional memory cells having "planar" type selection transistors that are not shared, because the buried vertical selection grids greatly reduce their area and even more so that they are shared. Moreover, in one embodiment of the invention, a memory plane according to the invention may comprise a first memory zone made from memory cells as described in FIG. 1, forming an erasable mass memory per page. and a second memory area made from memory cells according to the invention, forming a bit-wise or word-erasable data memory, providing finer erasure granularity than the mass memory and more suitable for certain applications. FIG. 24 is a sectional view of the memory cell Ci, j according to a section plane AA 'shown in FIG. 23 and perpendicular to the section plane of FIGS. 3 and 4, together showing the transistors TRi, j, TEi, i and their common floating gate FGT. This figure also shows that it is possible to further reduce the width W of the memory cell by reducing the width of the central isolating trench STIO which separates the transistors TRi, j, TEi, j, this insulating trench 20 not having need to present the insulation width usually retained for trenches STIL, STI2 which separate neighboring memory cells, since transistors TRi, j are electrically coupled.
[0033] FIG. 25 is the electrical diagram of a memory MEM 'comprising the memory plane MA1 according to the invention, only the cells Ci, j being represented. The memory comprises a control circuit CCT1, a word line decoder RD1, a column decoder CD1, reading amplifiers SA in number equal to the number of bits of a word DTR to be read in the memory, for example a word of eight bits BO-B7, and erase locks or EPLT programming. If the selected programming method is the hot electron injection programming method described above, the EPLT latches and the CD1 column decoder are configured to apply programming voltages to the RBLi bit lines or apply voltages. erasing the bit lines EBLi, depending on the value of the bits of a DTW word to be written or erased in the memory, for example an eight-bit word BO-B7.
[0034] If the selected programming method is the Fowler Nordheim effect programming method described above, the EPLT latches and the column decoder CD1 are configured to apply programming voltages or erase voltages to the EBLi bit lines, in accordance with FIG. according to the value of the bits of a DTW word to be written or erased in the memory. The word line decoder RD1 controls the voltages applied to the gate control lines CGLi, CGLi_i and the word line according to a most significant address A (n-1) -A (x) of a word , or line address. The decoder CD1, in combination with the locks EPLT, controls the voltages applied to the bit lines RBLi, EBLi as a function of a low-order address A (x-1) -A (0) of the word, or column address, the row and column addresses together forming the address A (n-1) -A0 of a word to be read or written in the memory plane.
[0035] The memory is thus structurally erasable by bit, but can be configured to be word-erasable only with respect to the erasing features offered to the end user. In read mode, the decoder CD1 connects the sense amplifiers SA to the bit lines RBLi connected to the memory cells to be read, and the sense amplifiers provide the word DTR. The circuit CCT1 comprises for example a central processing unit CPU, a voltage generator VGEN, and registers of addresses and data REG. It executes read or write commands, provides control of decoders, latches, read amplifiers, provision of the voltages required for read or write operations (erasure and programming), supply of weight addresses strong and of low weight to the decoders, and if necessary 35 runs a program for refreshing memory cells.
[0036] Although the improvement just described was initially designed to be applied to a memory cell structure of the type shown in FIG. 1, it will be apparent to those skilled in the art that embodiments of this improvement can be applied to other types of memory cells. By way of example, FIG. 26 represents an embodiment of this improvement applied to memory cells without selection transistor. The memory plane MA1 'shown comprises memory cells Ci, j, Ci 1 7 each comprising a floating gate transistor TRi, j, respectively, and a floating gate transistor TEi, j, respectively of the same structure as those described above. The transistor TRi, i has a drain terminal connected to the RBLi bit line, a control gate CGr connected to the word line WLi, and a source terminal connected directly to the source line SL. The transistor TEi, i comprises a drain terminal connected to the EBLi bit line, a control gate CGr connected to the word line WLi, and an unconnected source terminal. As before, the floating gate FGr of the transistor TRi, i is electrically connected to the floating gate FGe of the transistor TEi, i and the latter comprises the conductive region IS opposite its floating gate, for erasing the memory cell. The memory cell Ci 17presents an identical structure and the description above applies by replacing the index i by the index i-1.
[0037] Still other variants could be provided, for example by removing the source terminal of the transistors TEi, j, TEi_i, i in the embodiment of Fig. 26 or in the embodiment of Fig. 2, or by deleting the selection transistors ST associated with the transistors TEi, j, TEi_i, i in the embodiment of FIG. 2. FIG. 27 represents an embodiment of a composite memory MEM2 according to the invention, comprising: sector SO receiving a MAO memory array of the type described above in relation with FIG. 1 and a sector S1 receiving a memory array MA1 of the type described above in relation to FIG. 2. The two memory planes are preferably produced in two different caissons 5, for example P wells ("P-Wells"), in order to be able to apply different electrical potentials to their respective substrates. The memory cells of the sector SO are erased by the channel, as described in the application US 2013/0228846, by bringing the substrate to a positive erase voltage causing the extraction of electric charges from the floating gates of memory cells. The sector SO can be configured to be erasable per page or to be erasable by sector, in the second case all the memory cells 15 of the sector SO are erased at the same time. The memory cells of the sector SO can moreover be programmed by the channel, i.e. by the Fowler-Nordheim effect, as described in the aforementioned application, or be programmed by injection of hot electrons via bit lines. This second option has been retained in the embodiment described here. The memory cells of the sector S1 are erased in the manner described above via erasure bit lines EBL. Still as described above, they can be Fowler-Nordheim effect programmed, via erase bit lines, or programmed by hot electron injection, via RBL read bit lines. . This second option has been retained in the embodiment described here.
[0038] Sector SO is therefore an erasable sector per page or sector, while sector S1 is a bit erasable sector. Sector S1, however, can be configured to be word-erasable only with respect to the erasing features offered to the end user.
[0039] For the sake of simplicity of the drawing, only two pairs of previously described twin memory cells Mi, jr Mi-1, jr respectively Mi, jn, belonging here to two adjacent physical pages Pi, are shown in the memory plane MAO. The memory cells Mi, j, Mi_1, j + 1 are connected to bit lines BLi, BLi + i, to a word line WLi_i, i and to gate control lines CGLi, CGLi_i. Each memory cell comprises a floating gate transistor, respectively Ti, j, The drain terminals D of the transistors Ti, j, are connected to the bit line BLi and the drain terminals of the transistors Ti, j + 1 are connected. to the bit line BLi + 1. The control gates CG of the transistors Ti, j, Ti, j + 1 are connected to the gate control line CGLi and the control gates CG of the floating gate transistors are connected to the gate control line CGLi_i.
[0040] Each floating gate transistor Ti, j, has its source terminal connected to a source line SL through a selection transistor ST. The selection transistors ST of the twin memory cells Mi, j, respectively, share the same control gate CSG, here a vertical gate buried in the substrate receiving the memory plane MAO and connected to a word line WLi_i, i. Also, only two memory cells Ci-n, j / 2r Ci-n-1, j / 2 of the same structure as the cells Ci, j, previously described, are shown in the memory plane MA1. The memory cells Ci_n, i / 2, Ci_n_ 1, j / 2 are accessible for reading, programming and erasing via a first bit line RBLin, a second bit line EBLin, a word line WLi-n-1, i- nr and two grid control lines CGLi_n, CGLi-n_1- The memory cell Ci_n, i / 2 belongs to a physical page Pi-n of the memory plane MAd and the memory cell Ci_n_ 1, j / 2 belongs to an adjacent page The memory cell Ci_n, i / 2 comprises two floating gate transistors TRi_n, i / 2, TEi_n, i / 2 whose floating gates FGr, FGe are interconnected and / or formed by the same conductive element CFG. Similarly, the memory cell Ci_ n-1, j / 2 comprises two floating gate transistors TRi_n_ TEi '1,, j / 2 whose floating gates FGr, FGe are interconnected and / or formed by the same conductive element CFG.
[0041] As previously described, each transistor TEi ,, i / 2, 1, j / 2 comprises a conductive region IS which extends opposite its floating gate FGe with the interposition of a tunnel dielectric layer, the IS region being connected. electrically at its drain terminal D.
[0042] The transistor TRi ,, i / 2 has a control gate CGr connected to the gate control line CGLi ,, a drain terminal D connected to the bit line RBLin and a source terminal S connected to the drain terminal D of a selection transistor ST whose source terminal S is connected to a source line SL. The transistor TEi ', i / 2 has a control gate CGe connected to the gate control line CGLi ,, a drain terminal D connected to the bit line EBLin and a source terminal S connected to the drain terminal D a selection transistor ST whose source terminal S is connected to a source line SL. The transistor TRi_ / -1-1, j / 2 has a control gate CGr connected to the gate control line CGLi, i, a drain terminal D connected to the bit line RBLin and a connected source terminal S at the drain terminal D of a selection transistor ST whose source terminal S is connected to a source line SL. The transistor TEi_ / -1-1, j / 2 has a control gate CGe connected to the gate control line CGLi_n_i, a drain terminal D connected to the bit line EBLin and a source terminal S connected to the gate. drain terminal D of a selection transistor ST whose source terminal S is connected to a source line SL. The selection transistors ST associated with the floating gate transistors TRi_n, in, TRi_n_i, i / 2 have a common control gate CSG connected to a word line WLin1, in here a vertical grid buried in the substrate receiving the memory plane Wrong. Likewise, the selection transistors ST associated with the floating gate transistors TEi-n, jn have a buried vertical common control gate CSG which is connected to the word line. It will be possible to refer to FIG. sectional view of an embodiment of transistors TEi ,, i / 2, 1, j / 2 and their selection transistors ST, these being identical to transistors TEi, j, TEi_i, i, ST shown. Likewise, reference can be made to FIG. 4 as a cross-sectional view of a mode of realization of transistors 1, j / 2 and their selection transistors ST, these being identical to transistors TRi, j , ST represented.
[0043] According to one aspect of the invention allowing the composite memory MEM2 to be viewed from the outside as a unitary memory, that is to say to be accessible from the same address input whatever either the sector SO or S1 referred to, the sectors SO and Sl, or at least part of them, share the same bit lines. Thus, in the exemplary embodiment shown, the conductive line forming the bit line BLi of the memory plane MAO extends to the memory plane MA1 where it forms the bit line RBLin. Similarly, the conductive line forming the bit line BLi + i of the memory plane MAO extends to the memory plane MA1 where it forms the EBLin bit line.
[0044] More generally, by denoting by "j" an index formed by an integer and even number, it follows from this composite memory structure that bit lines BLi of rank "j" (ie j = 0, 2, 4, 8 ) can be used for reading or programming by hot electron injection of memory cells of the memory array MAO, and that they can be used as bit lines RBLin of rank j / 2 (ie j / 2 = 0 , 1, 2, 3, 4 ...), for reading or programming by hot electron injection of memory cells memory plane MA1, as described above.
[0045] Also, bit lines BLi + i of odd "j + 1" rank (ie j + 1 = 1, 3, 5, 7) can be used for reading or programming by injecting hot electrons from the memory cells of the memory map MAO, and can be used, as EBLin bit lines of rank j / 2 (ie 30 j = 0, 1, 2, 3, 4 ...), for the Fowler Nordheim effect deletion of memory cells In an alternative embodiment, these bit lines could also be used for the Fowler Nordheim effect programming of memory cells of the memory array MA1, in accordance with the method described above.
[0046] The memory cells Ci_n, i12, 1, j / 2 being each connected to two lines of bit RBL, EBL, the number of bits that can store a page Pi-n, Pi-n-1 of the memory plane MA1 is equal to half the number of bits that can store a page Pi, Pi-1 of the memory plane MAO, for an identical number of bit lines crossing the two memory planes MAO, MAl. More particularly, at identical word size in each of the sectors, if the pages of the first sector SO each comprise N2 words of N1 bits each, the pages of the second sector S1 then comprise N2 / 2 words of N1 bits each.
[0047] The structure of the composite memory plane of the memory ME / 12 can moreover be organized in the manner of the FLASH memories, by grouping in columns all the memory cells receiving bits of the same rank of binary words stored by the memory. For example, as shown in Fig. 27, the composite memory array is organized into N1 columns COLk of rank k, where k is a column index ranging from 0 to N11 corresponding to the number of bits per word (for example, k = 0 to 7 for eight-bit words). Each column COLk has N2 bit lines BLi, BLi + i (j being then an index varying from 0 to N2-2 and j + 1 an index varying from 1 to N2-1), N2 corresponding to the number of words per page. . In the memory plane MAO each bit line BLi or BLi + i is connected to memory cells of rank j or j + 1 containing bits of the same rank. In memory plane MA1, each pair of bit lines BLi, forming a pair of bit lines RBLin, EBLin, is connected to rank memory cells containing bits of the same rank. Each page of the memory map MAO can then receive N2 words of N1 bits each, erasable per page, and each page of the memory plane MA1 can receive N2 / 2 words of N1 bits each.
[0048] The memory MEM2 also comprises control elements which, starting from an address of n bits A. (n-1) - .A0 supplied to the memory, read, program or erase memory cells in any one sectors SO or Sl. In the example shown in FIG. 27, these elements comprise a control circuit CCT2, a word line decoder RD2, a column decoder CD2, reading amplifiers SAk at the rate of one amplifier per column COLk, and erase or program locks EPLTk one lock per column. The column decoder CD2 comprises a column predecoder CPD, demultiplexers MUXk one column by demultiplexer, groups of selection transistors TSGk one group per column. The circuit CCT2 comprises for example a central processing unit CPU, a voltage generator VGEN, and registers of addresses and data REG. It executes read or write commands, controls the decoders, provides the voltages necessary for read or write operations (erasure-programming), the supply of the high and low order addresses to the decoders , and if necessary runs a program for refreshing memory cells.
[0049] A group of transistors TSGk of a column COLk comprises a selection transistor TSi, TSi + i by bit line BLi, BLi + i, for connecting the bit line to the input of the demultiplexer MUXk. The selection transistors are driven by selection signals provided by the CDP column predecoder. The demultiplexer comprises two transistors-switches Tx1, Tx2. The transistor Tx1 connects the input of the demultiplexer MUXk to the sense amplifier SAk assigned to the column COLk, whose output is connected to a bus the words DTR read in the memory. The data transistor carrying Tx2 connects the input of the column COLk, where the word DTW to write demultiplexer MUXk to the latch EPLTk assigned to the output is connected to a data bus carrying in the memory. The pre-decoder CPD receives, in addition to a column address CAD (address bits A (x-1) -A (0)) designating the location of the bits of the word in each column, a signal SO / S1. indicating in which sector is a word selected for reading, deleting or programming, and an operation signal OP indicating whether the current operation is a read, erase or program operation.
[0050] The transistor Tx1 is driven by a signal RD ("Read") which turns on the transistor when the memory is in read mode. In this case, a bit line of the column COLk is connected to the sense amplifier SAk, via a selection transistor TS. The CPD precoder is configured such that this bit line is any line of the column if the word to be read is in the sector SO, or a line of even bit if the word to be read is in the sector S1, a line of read bit RBL sector Sl.
[0051] The transistor Tx2 is driven by a PE signal ("Program-Erase") which makes the transistor go when the memory performs an erase or program operation. In this case, a bit line of the column COLk can be selected and connected to the lock EPLTk via a selection transistor TS. More particularly, the CPD precoder is configured as follows: - if the current operation is a programming and if the word to be erased is in the sector SO, any line of the column COLk, designated by the address of column, is selected, 20 - if the current operation is a programming and if the word to be erased is in the sector Sl, an even line of the column COLk, a line of read bit RBL of sector S1, designated by the column address, is selected, - if the current operation is a deletion and the word to be erased is in the sector S0, no bit line is selected, the deletion being then managed by the line decoder RD2 for an overall deletion of the page concerned or of the sector, - if the current operation is an erasure and if the word to be erased is in the sector S1, an odd line of the column COLk, either 30 a line of erasure bit EBL of the sector Sl, denoted by the column address, is selected. The RD2 decoder receives a PAD word line address or page address, comprising most significant bits A (n-1) -A (x), and can be divided into two parts of the RD20 and RD21 decoder, the portion RD20 being assigned to the control of the word lines WLi_i, i of the sector SO and the part RD21 assigned to the control of the word lines WLinl, in sector S1. The RD20 portion is then configured to support blanking of the pages of the SO sector in addition to their selection, by applying to the unselected wordlines appropriate erasure inhibition voltages (if one page erase is targeted ). The RD21 part only manages the selection of the pages containing memory cells to be read, erased or programmed, since the erasure is carried out individually via the bit lines.
[0052] The composite memory ME / 12 which has just been described offers the advantage that the sector SO can be used for example for fast recording of large data, such as images or programs, and sector S1 is usable by for example for fast recording of small data, for example variables of a program, or any data comprising a small number of words. It is capable of various applications and in particular applications called "embedded memory" that is to say, integration of a memory in a semiconductor chip receiving a microcontroller. A program for optimizing the memory space 20 can be provided for deciding whether data to be memorized must be recorded in the sector SO or in the sector S1 according to their nature or the nature of the operation that the microcontroller performs. .
[0053] Table 1: Fowler Nordheim erasure of Ci, i via TEij, Figs. 5 and 6 Ref. Description Sign Example CG.Vi Erase voltage applied to the control gate CGLi of the transistors TRij, TEii of the negative -8V memory cell Ci i (memory cell selected by deletion) via the gate control line CGLi CGVi_i Voltage of deletion inhibition applied to the control gate CGLi_i of the transistors TRi_i, j, positive 3V TEi_i, j of the memory cell Ci_i, i (twin memory cell not selected in deletion) via the gate control line CGLi EBLV Voltage of erasure applied to the bit line EBLj positive 6V RBLV Voltage applied to the bit line RBLj - HZ (*) SV Selection voltage applied to the word line - OV WLi_i, i common to the twin memory cells Ci_i, i, Ci, i SPV Source line voltage applied to all source lines SL (or source plane) - OV VB Electrical potential of PW-OV substrate CGV * Default voltage applied to all other grid control lines 3L EBLV positive CGL * Default voltage applied to unselected EBL bit lines - OV RBLV * Default voltage applied to an unselected RBL bit line - OV SV * Voltage applied to selected non-OV WL word lines (* ) High impedance, ie line disconnected from the remainder of the circuit. Table 2: Fowler-Mmaxilleimde Cij via TEij, Figs. 8 and 9 Ref. Description Sign Example CGVi Voltage applied to the control gate CGLi positive 14V of the transistors TRij, TEii of the memory cell Ci i (memory cell selected in programming) via the gate control line CGLi CGVi_i Voltage applied to the control gate CGLi_i positive 3V transistors TRi_i, i, TEi_i, i of the memory cell Ci_i, i (twin memory cell not selected in programming) via the gate control line CGLi EBLV Voltage applied to the bit line EBLj - OV RBLV Voltage applied to the bit line RBLj - HZ SV Selection voltage applied to the word line - OV WLi_i, i as with the twin memory cells Ci_i, i, Ci, i SPV Source line voltage applied to all SL source lines (or source plane) - OV VB Electrical potential of PW - OV substrate CGV * Voltage applied to all other 3V EBLV positive CGL grid control lines * Voltage applied to EBL bit lines not - 6V selected RBLV * Voltage applied to selected non - HZ RBL bit lines SV * Voltage applied to selected non - OV WL word lines 3025353 36 Table 3: Cij injection schedule, via TRij, Figs. 11 and 12 Ref. Description Sign Example CGVi Voltage applied to the control gate CGLi positive 10V of the transistors TRij, TEii of the memory cell Ci i (memory cell selected in programming) via the gate control line CGLi CGVi_i Voltage applied to the control gate CGLi_i - OV transistors TRi_i, i, TEi_i, i of the memory cell Ci_i, i (twin memory cell not selected in programming) via the gate control line CGLi EBLV Voltage applied to the bit line EBLj - OV or more RBLV Applied voltage to the positive bit line RBLj 4V SV Selection voltage applied to the positive word line 1-2V WLi_i, i as to the twin memory cells Ci_i, i, Ci, i SPV Source line voltage applied to all source lines SL (or source plane) - OV VB PW-OV substrate electrical potential CGV * Voltage applied to all other gate control lines CGL - OV EBLV * Voltage applied to bit lines Selected non - OV EBL RBLV * Voltage applied to selected non - OV RBL bit lines SV * Voltage applied to selected non - OV WL word lines 3025353 37 Table 4: Reading of Cij via TRij, Fig. 13 and 14 Ref. Description Sign Exerrple CGVi Voltage applied to the control gate CGLi of the positive 2-3V transistors TRij, TEij of the memory cell Ci j (memory cell selected for reading) via the gate control line CGLi CGVi_i Voltage applied to the control gate CGLi_i negatives -2V transistors TRi_i, i, TEi_i, i of the memory cell Ci_i, i (twin memory cell not selected in reading) via the gate control line CGLi EBLV Voltage applied to the bit line EBLj - OV RBLV Voltage applied to positive bit line RBLj 1V SV Selection voltage applied to word line WLi_i, i connects to twin memory cells Ci_i, i, Ci, i positive 3V SPV Source line voltage applied to all SL source lines (or at the source plane) - OV VB Electrical potential of the PW - OV substrate CGV * Voltage applied to all other lines of - OV grid control CGL EBLV * Voltage applied to bit lines EBL non - OV selected RBLV * Voltage applied to selected non-OV RBL bit lines SV * Voltage applied to selected non-OV WL word lines

权利要求:
Claims (15)
[0001]
REVENDICATIONS1. Non-volatile memory (MDM2) on a semiconductor substrate (PW) comprising: - bit lines (BLi, RBLin, EBLi / 2), - memory cells of a first type (Mi, j, Mi-1, j +1) each comprising a single floating gate transistor (Ti, j, the floating gate transistor having a drain region (D) electrically connected to a bit line (BLi, BLi_n), and - memory cells of a second type (Ci_n, j12, each comprising: - a first floating gate transistor (TRi_n, i / 2, TRi_n_ 1,, j / 2) having a drain region (D) electrically connected to a first bit line (BLj , RBLi / 2) to which are also electrically connected memory cells of the first type, and - a second floating gate transistor (TEi_n, i / 2, TE having a drain region (D) electrically connected to a second bit line (BLi + i, EBLin) to which are also connected electrically memory cells of the first type, and in which: - the grill the float (FGr, FGe) of the first floating gate transistor is electrically connected to the floating gate of the second floating gate transistor, and - the second floating gate transistor comprises a conductive region (IS, nl) extending opposite its floating gate (FGe) via a tunnel dielectric layer (Dl).
[0002]
2. A memory according to claim 1, comprising at least a first sector (SO, MAO) erasable per page or by sector, comprising memory cells of the first type (Mi, j, Mi-j, i-r1), and minus a second sector (S1, MA1) erasable by word or bit, comprising memory cells of the second type (Ci_n, i / 2, Ci, 1, j / 2)
[0003]
3. Memory according to one of claims 1 and 2, wherein the conductive region (IS, nl) of the second floating gate transistor 3025353 39 1, j / 2) of a memory cell of the second type (Ci-ri, i12, 1, j / 2) is a doped region of the substrate.
[0004]
4. Memory according to one of claims 1 to 3, wherein each floating gate transistor (Ti, j, Ti-1, jr Ti-1, j + 1) of a memory cell of the first type (MJ, j, Mi, j + 1, Mi 1, Mi-1, j + 1) and at least each first floating gate transistor (TRi_n, i / 2, TRi_ ni, j / 2) of a memory cell of the second type (Ci_n, i12, has a source region electrically connected to a source line (SL) through a selection transistor (ST).
[0005]
5. The memory of claim 4, wherein the selection transistor has a vertical control grid (CSG) buried in the substrate. 15
[0006]
6. Memory according to one of claims 4 and 5, wherein the memory cells of the first type Mi, j + 1, Mi 1, jr Mi-1, j + 1) and the second type (Ci-n, j / 2r are arranged in pairs, each pair of memory cells comprising a common selection transistor (ST).
[0007]
7. Memory according to one of claims 1 to 6, configured for, when erasing a memory cell of the second type (Ci_n, i12, 1, j / 2), apply an erase voltage to the line bit to which is connected the second floating gate transistor (TEi_n, i / 2, TEi'i, j / 2) of the memory cell, so as to extract electrical charges from the floating gate (FGe) of the second transistor to floating gate via the conductive region (IS, nl).
[0008]
Memory according to claim 7, configured for: when programming a first type memory cell i-4, j + 1), applying a programming voltage to the bit line (BLi, BLi + i) to which is connected the floating gate transistor (Ti, j, of the memory cell, and - when programming a memory cell of the second type (Ci_ 35 n, j / 2, Ci-n-1, j12) r apply a programming voltage to the 40 bit line (BLi + i, Enin) to which is connected the second floating gate transistor (TEi_n, i / 2, TEi_n_ 1, j / 2) of the memory cell.
[0009]
9. Memory according to one of claims 7 to 8, configured 5 for: - read a memory cell of the first type Mi, j + 1, Mi 1, j Mi-1, j + 1) via a bit line to which the floating gate transistor (Ti, j, of the memory cell is connected, and
[0010]
10 - reading a memory cell of the second type (Ci-n, i12, via a bit line to which the first floating gate transistor (TRi_n, i / 2, TRi-n_1, j / 2) of the memory cell is connected 10. Memory according to one of claims 1 to 9, comprising: - a column (COLk) of bit lines, comprising a plurality of bit lines, - a read circuit (SAk) associated with the column for individually reading a memory cell connected to a bit line (BLi, RBLin, BLi_n) of the column, - a programming circuit (EPLTk) associated with the column for programming a memory cell connected to a bit line (BLi , EBLi / 2) of the column, - an erase circuit (EPLTk) associated with the column for erasing a memory cell of the second type (Ci_n, i12, at a bit line (EBLin) of the column, 1, j / 2) connected a column decoder (CD2) configured to: - connect bit lines (BLi, RBLin, EBLi / 2) from the memory column to the reading circuit (SAk) or to the programming circuit (EPLTk), and 30 - connect to the erase circuit (EPLTk) bit lines of the column (BLi + i, EBLin) which are connected to the second floating gate transistors (TEi_n, in, TEi_n_i,) memory cells of the second type (Ci ,, i12, j / 2) -
[0011]
11. The memory of claim 10, wherein the column decoder is configured for: when reading a memory cell of the first type (Fli, j, i, j + 1, Mi_1, j + 1) connect any one of the bit lines to the read circuit (SAk), and - when reading a second type memory cell (Ci-n, i / 2, Ci-n5 1, i / 2) connecting to the reading circuit a bit line (BLi, RBLin) connected to the first floating gate transistor (TRi_n, in, TRi_n_ 1'j / 2) of a memory cell.
[0012]
12. Memory according to one of claims 10 and 11, in which the column decoder is configured for: when programming a memory cell of the first type Mi, j + 1, Mi-1, j i 1, j + 1) connect any one of the bit lines to the programming circuit (EPLTk), - when programming a memory cell of the second type (Ci_ 15 n, j / 2r connect to the programming circuit ( EPLTk) a bit line (BLi + i, EBLin) connected to the second floating gate transistor (TEi_n, in, TEi_n_l, j / 2) of the memory cell, and - when erasing a memory cell of the second type (Ci_n, in, connect to the programming circuit (EPLTk) a bit line 20 connected to the second floating gate transistor (TEi_n, i12, TEi_n_i, i / 2) of the memory cell.
[0013]
13. Memory according to one of claims 10 to 12, wherein the programming and erasing circuits are grouped in an erasure and programming block (EPLTk) connected to all the bit lines of a column through the column decoder, and providing an erase voltage or a programming voltage. 30
[0014]
Memory according to one of claims 10 to 13, in which the column decoder (CD2) is configured to receive an address (CAD) of a bit line within a column, information (S0 / S1 ) on the sector in which a memory cell is located, and information (OP) on a type of operation applied to a memory cell, namely reading, programming or erasure. 3025353 42
[0015]
15. Memory according to one of claims 1 to 14, wherein the first sector (S0) comprises pages each comprising N binary words, and the second sector (S1) comprises pages each comprising N / 2 words having the same number. of bits as the words of the first sector.

类似技术:

公开号 | 公开日 | 专利标题

FR3025353A1|2016-03-04|NON-VOLATILE COMPOSITE MEMORY WITH ERASE BY PAGE OR BY WORD

FR3021803A1|2015-12-04|MEMORY CELLS TWINLY ACCESSIBLE INDIVIDUALLY READING

FR3021804A1|2015-12-04|DUAL NON-VOLATILE MEMORY CELL COMPRISING AN ERASING TRANSISTOR

EP1495496B1|2009-11-18|Non-volatile, programmable, electrically erasable memory semiconductor device having a single grid material layer and corresponding magnetic core plane

EP1014447A1|2000-06-28|One-time-programmable memory cell manufactured in CMOS tecnology

FR2640797A1|1990-06-22|SEMICONDUCTOR PROGRAMMABLE ELECTRICALLY ERASABLE MEMORY DEVICE AND METHOD FOR ERASING AND PROGRAMMING SAME

EP1342244A1|2003-09-10|Page-erasable flash memory

FR2825829A1|2002-12-13|Semiconductor random-access memory device e.g. for notebook computer, has memory cell arrays capable of performing random access function

FR2996680A1|2014-04-11|NON-VOLATILE MEMORY HAVING VERTICAL SELECTION TRANSISTORS

EP1727152B1|2008-12-24|EEPROM memory architecture

FR2916085A1|2008-11-14|METHOD FOR OPERATING A MEMORY DEVICE AND ELECTRONIC DEVICE

FR2987696A1|2013-09-06|METHOD FOR READING WRITTEN NON-VOLATILE MEMORY CELLS

FR3021806A1|2015-12-04|METHOD FOR PROGRAMMING NONVOLATILE MEMORY CELL COMPRISING A SHARED SELECTION TRANSISTOR GRID

FR3029343A1|2016-06-03|COMPACT MEMORY DEVICE OF ELECTRICALLY ERASABLE AND PROGRAMMABLE TYPE

FR3025649A1|2016-03-11|METHOD OF POLARIZING A BURIED SOURCE PLAN OF A NON-VOLATILE MEMORY WITH VERTICAL SELECTION GRIDS

FR2987700A1|2013-09-06|NON-VOLATILE MEMORY COMPRISING MINI FLOATING POTENTIAL HOUSINGS

FR2633433A1|1989-12-29|Semiconductor non-volatile memory device, especially electrically programmable and erasable read-only memory device, with NAND cell structure

FR2976115A1|2012-12-07|NON-VOLATILE MEMORY COMPRISING A CAPACITIVE COUPLING BETWEEN BIT LINES

FR2871940A1|2005-12-23|TRANSISTOR MOS WITH FLOATING GRID, WITH DOUBLE CONTROL GRID

EP0750313A1|1996-12-27|EEPROM memory, programmed and erased by Fowler-Nordheim effect

FR3036221A1|2016-11-18|INTERCONNECTION STRUCTURE OF BINARY MEMORY CELLS

EP2977988B1|2019-06-19|Non-volatile memory with programmable resistance

FR2683664A1|1993-05-14|INTEGRATED MEMORY ELECTRICALLY PROGRAMMABLE TO A TRANSISTOR THRESHOLD.

EP1863035B1|2011-07-27|EEPROM memory with an improved resistor against transistors breakdown

EP0865045A1|1998-09-16|Nonvolatile electrical memorisation method for a bit and corresponding memory device

同族专利:

公开号 | 公开日

CN204991153U|2016-01-20|

US20160064089A1|2016-03-03|

CN105390154B|2019-05-07|

FR3025353B1|2016-09-09|

CN105390154A|2016-03-09|

US9460798B2|2016-10-04|

引用文献:

公开号 | 申请日 | 公开日 | 申请人 | 专利标题

US20040080982A1|2002-10-28|2004-04-29|Tower Semiconductor Ltd.|Complementary non-volatile memory cell|

US20140063957A1|2011-12-02|2014-03-06|Tsinghua University|Nor flash memory array structure, mixed nonvolatile flash memory and memory system comprising the same|

US20130228846A1|2012-03-05|2013-09-05|Stmicroelectronics Sas|Nonvolatile memory cells with a vertical selection gate of variable depth|

US5182725A|1987-11-20|1993-01-26|Mitsubishi Denki Kabushiki Kaisha|Nonvolatile semiconductor memory device with reduced variation in source potential of floating gate type memory transistor and operating method therefor|

US6433382B1|1995-04-06|2002-08-13|Motorola, Inc.|Split-gate vertically oriented EEPROM device and process|

TW546778B|2001-04-20|2003-08-11|Koninkl Philips Electronics Nv|Two-transistor flash cell|

FR2844090A1|2002-08-27|2004-03-05|St Microelectronics Sa|MEMORY CELL FOR QUICK READ NONVOLATILE REGISTER|

US6894339B2|2003-01-02|2005-05-17|Actrans System Inc.|Flash memory with trench select gate and fabrication process|

US7358134B2|2003-09-15|2008-04-15|Powerchip Semiconductor Corp.|Split gate flash memory cell and manufacturing method thereof|

US7126188B2|2004-05-27|2006-10-24|Skymedi Corporation|Vertical split gate memory cell and manufacturing method thereof|

US8139408B2|2006-09-05|2012-03-20|Semiconductor Components Industries, L.L.C.|Scalable electrically eraseable and programmable memory|

US7696044B2|2006-09-19|2010-04-13|Sandisk Corporation|Method of making an array of non-volatile memory cells with floating gates formed of spacers in substrate trenches|

US7723774B2|2007-07-10|2010-05-25|Silicon Storage Technology, Inc.|Non-diffusion junction split-gate nonvolatile memory cells and arrays, methods of programming, erasing, and reading thereof, and methods of manufacture|

US7800159B2|2007-10-24|2010-09-21|Silicon Storage Technology, Inc.|Array of contactless non-volatile memory cells|

US8072811B2|2008-05-07|2011-12-06|Aplus Flash Technology, Inc,|NAND based NMOS NOR flash memory cell, a NAND based NMOS NOR flash memory array, and a method of forming a NAND based NMOS NOR flash memory array|

KR20100115612A|2009-04-20|2010-10-28|삼성전자주식회사|Non-volatile semiconductor memory device capable of preventing program disturb and programing method thereof|

US20110199830A1|2010-02-12|2011-08-18|Peter Wung Lee|Flotox-based, bit-alterable, combo flash and eeprom memory|

US8958245B2|2010-06-17|2015-02-17|Ememory Technology Inc.|Logic-based multiple time programming memory cell compatible with generic CMOS processes|

KR101187641B1|2011-03-04|2012-10-08|에스케이하이닉스 주식회사|Nonvolatile memory device, method of fabricating the same, and method of operating the same|

FR2987696B1|2012-03-05|2014-11-21|St Microelectronics Rousset|METHOD FOR READING WRITTEN NON-VOLATILE MEMORY CELLS|

JP5972700B2|2012-07-31|2016-08-17|ルネサスエレクトロニクス株式会社|Memory device|

US20140198583A1|2013-01-17|2014-07-17|Infineon Technologies Ag|Method and System for Reducing the Size of Nonvolatile Memories|

TW201508753A|2013-08-29|2015-03-01|Chrong-Jung Lin|Memory cell, memory array and operation method thereof|

FR3021803B1|2014-05-28|2017-10-13|Stmicroelectronics Sas|MEMORY CELLS TWINLY ACCESSIBLE INDIVIDUALLY READING|

FR3021804B1|2014-05-28|2017-09-01|Stmicroelectronics Sas|DUAL NON-VOLATILE MEMORY CELL COMPRISING AN ERASING TRANSISTOR|

FR3025353B1|2014-09-03|2016-09-09|Stmicroelectronics Sas|NON-VOLATILE COMPOSITE MEMORY WITH ERASE BY PAGE OR BY WORD|FR3025353B1|2014-09-03|2016-09-09|StmicroelectronicsSas|NON-VOLATILE COMPOSITE MEMORY WITH ERASE BY PAGE OR BY WORD|

US10478893B1|2017-01-13|2019-11-19|General Electric Company|Additive manufacturing using a selective recoater|

CN107393925A|2017-08-09|2017-11-24|上海华虹宏力半导体制造有限公司|The preparation method of flash memory and flash memory|

US10847225B2|2018-06-20|2020-11-24|Microchip Technology Incorporated|Split-gate flash memory cell with improved read performance|

CN111192616B|2020-04-14|2020-10-02|深圳市芯天下技术有限公司|NOR FLASH chip and method for eliminating over-erasure in erasing process thereof|

法律状态:
2015-08-27| PLFP| Fee payment|Year of fee payment: 2 |

2016-03-04| PLSC| Search report ready|Effective date: 20160304 |

2016-08-22| PLFP| Fee payment|Year of fee payment: 3 |

2017-08-22| PLFP| Fee payment|Year of fee payment: 4 |

2018-08-22| PLFP| Fee payment|Year of fee payment: 5 |

2019-08-20| PLFP| Fee payment|Year of fee payment: 6 |

2021-06-11| ST| Notification of lapse|Effective date: 20210506 |

优先权:

申请号 | 申请日 | 专利标题

FR1458239A|FR3025353B1|2014-09-03|2014-09-03|NON-VOLATILE COMPOSITE MEMORY WITH ERASE BY PAGE OR BY WORD|FR1458239A| FR3025353B1|2014-09-03|2014-09-03|NON-VOLATILE COMPOSITE MEMORY WITH ERASE BY PAGE OR BY WORD|

US14/795,742| US9460798B2|2014-09-03|2015-07-09|Page or word-erasable composite non-volatile memory|

CN201520565163.4U| CN204991153U|2014-09-03|2015-07-30|Storage location and nonvolatile memory|

CN201510459611.7A| CN105390154B|2014-09-03|2015-07-30|Page or the erasable compound nonvolatile memory of word|

[返回顶部]